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| BAM120 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM120 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 150 MHz. PACKAGE STYLE .500 4L FLG FEATURES: * C = 65 % typ. @ 120 W/150 MHz * PG = 9.0 dB typ. @ 120 W/150 MHz * OmnigoldTM Metalization System MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG JC 12 A 60 V 4.0 V 140 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.2 C/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER ORDER CODE: ASI10430 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO hFE COB PG C VCC = 27 V IC = 20 mA IC = 50 mA IE = 5.0 mA VCE = 25 V VCE = 27 V TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 60 32 4.0 UNITS V V V IC = 3.5 A f = 1.0 MHz POUT = 120 W f = 150 MHz 15 240 9.0 65 100 --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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